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Microlithography/Molecular Imprinting (Advances in Polymer Science): Kobayashi, T.

Posted By : rector12345 | Date : 18 Aug 2009 17:22:58 | Comments : 0 |
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3540218629

Microlithography/Molecular Imprinting (Advances in Polymer Science): Kobayashi, T.
Springer | ISBN: 3540218629 | 2005 | PDF (OCR) | 276 pages | 3.78 Mb

Table of Contents: Molecular Imprinting: State of the Art and Perspectives
J.D. Marty, M. Mauzac
1(36)
1 Introduction
2(2)
2 MIP Materials
4(10)
2.1 The Different Stages Involved in the Preparation of the Materials
5(8)
2.1.1 Preorganisation Stage
5(5)
2.1.2 Step of Polymerisation-Crosslinking of the Monomers Around the Complex Formed in the First Step
10(2)
2.1.3 Template Molecule Extraction Stage
12(1)
2.2 Influence of the Solvent
13(1)
3 Recognition Properties
14(3)
3.1 Guest Capacity
14(1)
3.2 Specificity of Recognition
14(2)
3.3 Lifetime of the MIPs
16(1)
4 Main Uses of Imprinted Polymers
17(5)
4.1 Separation of Molecules
17(2)
4.2 Preparation of Antibody Analogues
19(1)
4.3 Sensors
20(1)
4.4 Stereoselective Reactions and Catalysis
20(2)
5 Summary and Outlook
22(7)
5.1 Molecularly Imprinted Hydrogels
24(1)
5.2 Two-Dimensional Molecular Imprinting
24(2)
5.3 Liquid Crystalline Imprinted Materials
26(3)
6 Conclusion
29(1)
References
30(7)
Chemical Amplification Resists for Microlithography
H. Ito
37(4)
1 Introduction
41(6)
2 Chemical Amplification Concept
47(1)
3 Photochemical Acid Generators
48(5)
4 Chemically Amplified Imaging Mechanisms
53
4.1 Deprotection
54(85)
4.1.1 Carbonates
55(7)
4.1.2 Esters and Ethers
62(2)
4.1.3 Hydrolysis
64(1)
4.1.4 Polyhydroxystyrenes
65(5)
4.1.5 Copolymers
70(10)
4.1.6 Blends and Dissolution Inhibitors
80(5)
4.1.7 Deprotection Involving Ring-Opening (Mass Persistent Resists)
85(1)
4.1.8 Dendritic Polymers and Small Amorphous Materials
86(2)
4.1.9 Evolution of 248 nm Positive Resists
88(9)
4.1.10 Polymethacrylates and Norbornene Polymers for 193 nm Lithography
97(24)
4.1.11 Fluoropolymers for 157 nm Lithography
121(16)
4.1.12 Resists for Next Generation Lithography
137(2)
4.2 Depolymerization
139(7)
4.2.1 Thermodynamically-Driven Depolymerization
140(5)
4.2.2 Repeated Catalytic Main Chain Scission
145(1)
4.3 Rearrangement
146(5)
4.3.1 Polarity Reversal
146(2)
4.3.2 Claisen Rearrangement
148(1)
4.3.3 Pinacol Rearrangement
149(2)
4.4 Intramolecular Dehydration
151(1)
4.5 Condensation/Intermolecular Dehydration
152(9)
4.6 Esterification
161(3)
4.7 Polymerization/Crosslinking
164(2)
5 Environmentally Friendly Processes
166(1)
5.1 Water-Processable Resists (Casting and Development)
166(6)
5.2 CO2-Processable Resists (Casting, Development, Rinse, and Strip)
172(3)
6 Bilayer Lithography and Top-Surface Imaging
175(2)
6.1 Bilayer Lithography with Organosilicon Resists
177(11)
6.1.1 Semi-Dry Bilayer Lithography (Wet Development/02 RIE Pattern Transfer)
178(6)
6.1.2 All-Dry Bilayer Lithography
184(4)
6.2 Silylation of Organic Resists
188(13)
6.2.1 Reaction-Controlled Silylation
188(4)
6.2.2 Diffusion-Controlled Silylation
192(2)
6.2.3 Bilayer Silylation
194(1)
6.2.4 Silylation after Wet Development
195(3)
6.2.5 Flood Silylation/Imagewise Desilylation
198(1)
6.2.6 Surface Modification
198(3)
6.3 Process Issues in Bilayer and Dry Lithographic Techniques
201(1)
7 Resist Characterization
202(1)
7.1 Molecular Weight Determination
203(1)
7.2 Thermal Analysis
203(1)
7.3 Spectroscopic Analysis
204(3)
7.3.1 UV Spectroscopy
204(1)
7.3.2 NMR Spectroscopy
205(1)
7.3.3 IR Spectroscopy
206(1)
7.3.4 Mass Spectroscopy
207(1)
7.4 Surface Analysis
207(1)
7.5 Neutron Scattering
208(1)
7.6 Neutron and X-Ray Reflectometry
208(1)
7.7 "C Labeling/Scintillation
208(1)
7.8 Laser Interferometry
208(1)
7.9 Quartz Crystal Microbalance
209(2)
7.10 Measurements of Optical Properties of Films
211(1)
8 Resist Performance Parameters
212(1)
8.1 Resist Sensitivity and Contrast
212(1)
8.2 Linear Resolution
213(1)
8.3 Depth of Focus (DOF) or Focus Latitude
214(1)
8.4 Exposure Latitude (Dose Latitude)
215(1)
8.5 Resist Image Profiles
216(1)
8.6 Isolated-Nested Bias
216(1)
8.7 PEB and PED Stability
217(1)
8.8 Line Edge Roughness
217(1)
8.9 Dry Etch Resistance
217(1)
9 Resolution Limit - Acid Diffusion/Image Blur
217(4)
10 Closing Remarks and Future Perspectives
221(2)
References 223(24)
Author Index Volumes 101-172 247

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